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| 2N5784 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) SILICON EPITAXIAL NPN TRANSISTOR 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. FEATURES General purpose power transistor for switching and linear applications in a hermetic TO-39 package. 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45 TO-39 PACKAGE PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCER(sus) VCEO(sus) VEBO IC IB PD PD TJ , TSTG TL Collector - Base Voltage Collector - Emitter Sustaining Voltage RBE = 100W Collector - Emitter Sustaining Voltage Emitter - Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation TA = 25C Derate above 25C Total Device Dissipation TC = 25C Derate above 25C Operating Junction and Storage Temperature Range Lead temperature, 1/32" (0.8mm) from seating plane for 10 s max. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 80V 80V 65V 5V 3.5A 1A 10W 0.057W/C 1W 0.0057W/C -65 to +200C 230C Prelim. 8/96 Semelab plc. 2N5784 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter ICER ICEX ICEO IEBO hFE* Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Conditions VCE = 65V RBE = 100W VCE = 75V RBE = 100W VCE = 50V VBE = -5V VCE = 2V VCE = 2V 1 Min. TC = 150C VBE = -1.5V TC = 150C IB = 0 IC = 0 IC = 1A IC = 3.2A IB = 0 RBE = 100W IC = 1A IB = 100mA IC = 100mA IC = 100mA IC = 1A 5 25 20 4 65 80 Typ. Max. 10 1 10 1 100 10 100 Unit mA mA mA mA mA -- V mA VCEO(sus)* Collector - Emitter Sustaining Voltage 1 IC = 100mA VCER(sus)* Collector - Emitter Sustaining Voltage VBE Base - Emitter Voltage Collector - Emitter Saturation Voltage Small Signal Common - Emitter Current Gain hfe tON tOFF RqJC RqJA Small Signal Common - Emitter Current Gain Turn-on Time Turn-off Time Thermal Resistance Junction - Case Thermal Resistance Junction - Ambient 2 IC = 100mA VCE = 2V IC = 1A VCE = -2V f = 200kHz VCE = 2V f = 1kHz VCE = 30V 1.5 0.5 20 1/2hfe1/2 VCE(sat) V -- -- 5 15 17.5 17.5 IB1 = IB2 = 100mA ms C/W NOTES * 1) 2) 3) Pulse Test: tp = 300ms, d = 1.8%. These tests MUST NOT be measured on a curve tracer. Measured 1/4" (6.35 mm) from case. Lead resistance is critical in this test. Measured at a frequency where 1/2hfe1/2 is decreasing at approximately 6dB per octave. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 8/96 |
Price & Availability of 2N5784
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